Valence Band Structure ofInAs1-xBixandInSb1-xBixAlloy Semiconductors Calculated Using Valence Band Anticrossing Model
نویسندگان
چکیده
منابع مشابه
Valence Band Structure of InAs1−xBix and InSb1−xBix Alloy Semiconductors Calculated Using Valence Band Anticrossing Model
The valence band anticrossing model has been used to calculate the heavy/light hole and spin-orbit split-off energies in InAs(1-x)Bi(x) and InSb(1-x)Bi(x) alloy systems. It is found that both the heavy/light hole, and spin-orbit split E + levels move upwards in energy with an increase in Bi content in the alloy, whereas the split E - energy for the holes shows a reverse trend. The model is also...
متن کاملValence-band anticrossing in mismatched III-V semiconductor alloys
K. Alberi,1,2 J. Wu,1,2 W. Walukiewicz,1 K. M. Yu,1 O. D. Dubon,1,2 S. P. Watkins,3 C. X. Wang,3 X. Liu,4 Y.-J. Cho,4 and J. Furdyna4 1Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA 2Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA 3Department of Physics, Simon Fraser University, Burna...
متن کاملVALENCE BAND STRUCTURE OF PbTe
This paper is a review article covering our work in recent years on PbTe and the alloy semiconductor CdXPbl-,Te. It shows how measurements of the transport and optical properties of these materials support (1) the two valence band model for PbTe in which the principal light mass band is highly non-parabolic and the secondary heavy mass band is parabolic and (2) a value for the Hall-anisotropy f...
متن کاملValence band structure of BaCuSF and BaCuSeF
The origin of high hole conduction in BaCuQF Q=S,Se was investigated by photoemission measurements and full-potential linearized augmented plane wave band-structure calculations. In both compounds, the large dispersion near the top of the valence band is realized by admixed states of Cu 3d and S 3p or Se 4p orbitals, indicating that high hole mobility is possible. In addition, the valence band ...
متن کاملInter-valence-band hole-hole scattering in cubic semiconductors
Transitions between valence subbands resulting from hole-hole scattering in cubic semiconductors have been analyzed in the frame of Coulomb interaction of valence electrons in the Luttinger-Kohn representation. Expressions for transition rates are derived. Calculated rates for transitions between lightand heavy-hole bands are presented for germanium. Hole-hole scattering has remarkably differen...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: The Scientific World Journal
سال: 2014
ISSN: 2356-6140,1537-744X
DOI: 10.1155/2014/704830